| 摘要 |
PURPOSE:To detect with ease the contamination of a wafer surface so slight as to reject detection by naked eyes or microscopes or the like by a method wherein withstand voltage is measured after the formation of a conductive film on an insulating thin film covering a semiconductor wafer. CONSTITUTION:An insulating thin film 2 composed of a 500Angstrom thick thermal oxide film is formed on the upper surface of an Si wafer 1. Next, on the insulating thin film 2, a 2mum thick Al film is evaporated to form a conductive film 3. Application follows of a voltage across the Si wafer 1 and the conductive film 3 for the determination of the withstand voltage between the two. Evaluation of surface cleanliness of the Si wafer 1 based on the result of the measurement demonstrates that the cleanliness on the surface is of a highest grade. |
