| 摘要 |
PURPOSE:To easily apply selective heat treatment adjusted to patterns by a method wherein a negative resist is used and a thin film or the thin film and the lower layer are aimed by electron beams and selective heat treatment is applied at the same time of the exposure of the negative resist. CONSTITUTION:Electron beams are aimed at the patterns except a connection hole 5 with the irradiation amount suitable for hardening at about 1X10<-6>- 2X10<-5>c/cm<2> in accordance with a negative resist 4 and the electron beams are aimed at the part of the hole 5 at 5X10<-5>c/cm<2> or more and heat treatment is applied in addition to hardening. The control of the irradiation amount is done by delaying scanning speed, or by repeating irradiation or by increasing current density. In this way, the extension of treatment time is realized. However, the extension of time for this purpose is about 1/10-1/10<3> of the lithographic time for exposure only and has effectively little difficulty. This constitution can easily execute selective heat treatment adjusted to the pattern. |
