| 摘要 |
PURPOSE:To contrive the stabilization of an element, by not exposing a P-N junction plane to the side surface of a semiconductor element and coating the terminal end of the P-N junction plane with an insulating film. CONSTITUTION:An N type GaAs epitaxial layer 22 is formed on one main surface of an N type GaAs substrate 21. A P type GaAs eptaxial layer 23 is formed in lamination on this layer 22, and the side surface of the layer 23 is formed into a mesa surface. Next, an SiO2 layer 24 is adhered on the upper surface of the layer 23, and an N type GaAs layer 25 is formed on the surface of the mesa surface. The end part of the layer 25 on the layer 24 side is opposingly contacted with the layer 24, and the basic side of the layer 25 is connected to the layer 22. An anode electrode layer 26 is formed on the exposed surface of the layer 23 at the aperture of the layer 24. In this constitution, since the P-N junction plane does not expose to the side surface of the element 2, the terminal end of the P-N junction is coated with an insulating film, the stabilization of a light emitting element can be realized. |
