发明名称 REACTIVE ION ETCHING
摘要 PURPOSE:To apply uniform reactive ion etching by a method wherein an etching period and an idling period are alternately repeated during one time of etching. CONSTITUTION:In a reactive ion etching used a parallel-plate electrode 2, the temperature of a substrate rises by the collision of ions, high-speed neutrons, thermal radiation from plasma, and chemical reaction. At the time, the part having a large etching area differs from that having a small area in surface termperature because of the relation of heat radiation an the uniformity of etching rate is missed to unequalize pattern width. Then, high-frequency voltage is intermitted by switching operation and areaction product influence over etching is decreased by excluding the reaction product during a non-etching period and extremely uniform ething can be applied by constantly maintaining the surface temperature even if the etching area differs in the substrate.
申请公布号 JPS5870533(A) 申请公布日期 1983.04.27
申请号 JP19810168615 申请日期 1981.10.23
申请人 HITACHI SEISAKUSHO KK 发明人 SAITOU MASAKATSU;YUHARA AKITSUNA;OOSHIMA ISAO
分类号 H01L21/302;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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