发明名称 A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING A THERMOSETTING RESIN FILM
摘要 In the method a photoresist film 4 is formed. The photoresist film 4 is hardened by heat treatment. A thermosetting resin film 6 is formed over the hardened photoresist film. A further heat treatment, to cure the thermosetting resin film 6, is carried out at a temperature above 300 DEG C. …<??>The photoresist film 4 may be formed over a conductor layer 2 and an insulator layer 3 on a substrate 1. To give access to the conductor layer 2 a window is opened in the hardened photoresist film 4 and insulator layer 3 is etched through the window to form an opening 5. …<??>The thermosetting resin film 6 is formed over the hardened photoresist film 4 and in the opening 5 but is removed from opening 5 before the thermosetting resin film 6 is cured.
申请公布号 EP0026967(A3) 申请公布日期 1983.04.27
申请号 EP19800302569 申请日期 1980.07.28
申请人 FUJITSU LIMITED 发明人 KURAHASHI, TOSHIO;TOKITOMO, KAZUO;ONO, TOSHIHIKO
分类号 G03F7/11;H01L21/312;H01L23/29;H01L23/31;H01L23/556 主分类号 G03F7/11
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