发明名称 |
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING A THERMOSETTING RESIN FILM |
摘要 |
In the method a photoresist film 4 is formed. The photoresist film 4 is hardened by heat treatment. A thermosetting resin film 6 is formed over the hardened photoresist film. A further heat treatment, to cure the thermosetting resin film 6, is carried out at a temperature above 300 DEG C. …<??>The photoresist film 4 may be formed over a conductor layer 2 and an insulator layer 3 on a substrate 1. To give access to the conductor layer 2 a window is opened in the hardened photoresist film 4 and insulator layer 3 is etched through the window to form an opening 5. …<??>The thermosetting resin film 6 is formed over the hardened photoresist film 4 and in the opening 5 but is removed from opening 5 before the thermosetting resin film 6 is cured. |
申请公布号 |
EP0026967(A3) |
申请公布日期 |
1983.04.27 |
申请号 |
EP19800302569 |
申请日期 |
1980.07.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
KURAHASHI, TOSHIO;TOKITOMO, KAZUO;ONO, TOSHIHIKO |
分类号 |
G03F7/11;H01L21/312;H01L23/29;H01L23/31;H01L23/556 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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