| 摘要 |
PURPOSE:To shorten the ordered delivery term of semi-custom LSI's through destruction of ohmic connection between electrode and substrate by previously forming the electrode wirings on the element-formed semiconductor device surface and by implanting the O ion into the connection-unnecessary area. CONSTITUTION:The drain electrode windows 14, 14'... are formed and the wirings 12, 12'... are also formed. In response to the order, the surface is covered with the resist film 19 opening to the drain electrode window 14 which does not require wirings and the O<+> ion is implanted by providing wirings through the window 14. When th O<+> ion is implanted in the vicinity of interface between the wiring 12 and drain layer 14 by selecting an energy in accordance with thickness of wiring 12, the Si layer 15 and Al wiring combine with the oxygen O, resulting in the SiO2 and Al2O3. Thereby, connection with the wiring 12 is destroyed and the drain 2 of element T is isolated from the bit line B1. According to this structure, the ordered delivery term of semi-custom LSI such as mask ROM and gate array can be curtailed. |
