发明名称 PREPARATION OF SEMICONDUTOR DEVICE
摘要 PURPOSE:To avoid influence of floating capacitance due to micro-particles in the shielding layer by laminating a polyimide resin layer and that which the alpha ray is not irradiated and the solid micro-particles which shield such ray are dispersed on semiconductor element. CONSTITUTION:The poly-Si Al, PbO in the particle diameter of 0.3-5mum are mixed within the range 1/4-1/8 of the weight ratio of particle/resin. When a thin polyimide resin layer is coated in the thickness of about 100mum and the polyimide resin layer containing micro-particles is then laminated, a soft error can be effectively prevented, generation of crack due to thermal stress is suppressed and moreover there is no substantial change of characteristic without increase of floating capacitance due to micro-particles in the shielding layer.
申请公布号 JPS5870559(A) 申请公布日期 1983.04.27
申请号 JP19810168535 申请日期 1981.10.23
申请人 FUJITSU KK 发明人 SHIBATOMI AKIHIRO;OOSAWA AKIRA
分类号 H01L23/29;H01L23/31;H01L23/556 主分类号 H01L23/29
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