| 摘要 |
PURPOSE:To allow the control of the size of an FET channel width on a way of manufacturing processes, by providing a separatable part on the common connection part of at least one of a source electrode and a drain electrode. CONSTITUTION:The separable part 12 is provided on the common connection part of the drain electrode 8 corresponded to two drain regions. In the dual FET, two drainregions are electrically connected. The FET of this structure can perform the operation to improve the pair characteristic of two FETs in a wafer test process. When the pair characteristic particularly DELTAVGS of two FET bodies (the difference of the voltage VGS between gate source of each FET when the drain current is kept constant) is defective out of the standard, the separatable part 12 of a FET body with larger VGS is cut resulting in the electric isolation of e.g. the drain region on the right in the figure from the FET body. As the result, the gate width of the FET body is reduced, DELTAVGS of two FET bodies reduces, and accordingly a defective product can be changed into an acceptable one. |
