RESIST HAVING TWO-LAYERED STRUCTURE

摘要

PURPOSE:To obtain a resist for lithography capable of forming a resist pattern of high accuracy for manufacturing a semiconductor element by forming a resist having a 2-layered structure consisting of an upper layer of a resist with higher sensitivity and a lower layer of an org. polymer with lower sensitivity or no sensitivity on a substrate. CONSTITUTION:A thin layer 8 of an org. polymer with lower sensitivity to X-rays or electron beams such as polymethyl methacrylate or polyimide with no sensitivity is formed on an Si substrate 1. A resist layer 7 of polyhexafluorobutyl methacrylate or the like with higher sensitivity is formed on the layer 8 to obtain a resist having a 2-layered structure. When the resist layer 7 is irradiated with X-rays or electron beams 10 through a mask 9 for exposure, the layer 8 eliminates the effect of photoelectrons and Auger electrons 11 generates from the substrate 1 and prevents an unfavorable influence from being exerted on the upper layer 7. After developing the layer 7, the layer 8 is subjected to plasma ethcing with the layer 7 as a mask to obtain a resist pattern of high accuracy.