| 摘要 |
A diode circuit for monolithic integrated circuits which has a negligible leakage current to the substrate, is designed in such a way that the usual diffusion processes for manufacturing integrated circuits can be used. The cathodes 18, 23 of the diode are designed in the epitaxial n-collector layer 15 of the circuit, while the anode consists of a p+ embedded layer 13, which is situated under this collector layer and which is manufactured at the same time as the lower part of the insulation diffusions 14. The cathode area 23 is bordered by a ring 17 of the same conductive type as the embedded layer 13 and makes contact with this. Under the embedded layer 13 there is a subcollector layer 12 of n+ type which has a contact diffusion 19 of the same conductive type. The anode layer 13 and the subcollector layer 12 have thus a low-ohm interconnection. <IMAGE>
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