| 摘要 |
Optoelectronic resonance absorber arrangement for producing semiconductor photodetectors which can be used, in particular, in miniaturised optoelectronic arrangements. The aim of the invention is optoelectronic resonance absorber arrangements of a type which largely render surface recombination inactive, that is to say the rapid reunification of the pairs of charge carriers, formed from the penetrating radiation, on the recombinationally active surface of semiconductor photodetectors, and thus improve the quantum efficiency and other characteristic parameters of semiconductor photodetectors. The aim is achieved by mounting outside the resonance absorber optical media with suitable refractive indices, which have the effect that the absorption of the penetrating radiation directly behind the surface of the semiconductor photodetector is suppressed and concentrated on the active zones in the interior of the semiconductor. <IMAGE>
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