| 摘要 |
PURPOSE:To reduce wiring capacitance, and to enable operation at high speed by thickening the thickness of an insulating layer on a wiring region without thickening the thickness of the insulating layer on an element forming region as a Schottky diode section. CONSTITUTION:An N type epitaxial layer 12 is formed to a P type semiconductor substrate 11, and an element isolation region 14 is shaped through P type diffusion. The insulating layer only of the region 101 in which circuit elements are formed is removed through selective etching. The thickness of the insulating layer on the region 102 in which wiring after the process is shaped is formed in approximately 2,500Angstrom -3,000Angstrom . A base region 15 and a resistor region are molded as an element forming process, an emitter region 16 and a collector electrode section 17 are shaped, and a metallic wiring layer 18 is formed as a wiring process. The thickness (t) of the Schottky diode section 19 of the element forming region is approximately 3,000Angstrom and the thickness (t') of the wiring forming region is thick as approximately 6,000Angstrom in the thickness of the insulating layer 20 finally shaped through such processes. |
