SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF PRODUCING SAME

摘要

Integrated semiconductor circuit with a semi-insulating semiconductor layer (8) which is made of amorphous silicon on a single-crystal semiconductor body (1, 2) containing the functional units (2', 4, 5, 6) of the circuit and which is intended to increase the dielectric strength, and with an insulating layer (9) provided on the semi-insulating semiconductor layer (8).