| 摘要 |
PURPOSE:To remove the restriction of pattern design, and to improve the degree of integration by enabling the wiring of a region which must be blown out by a conductive material, the reflection factors thereof of laser-beams and electron beams are large and which is difficult to absorb energy. CONSTITUTION:An insulating film 2 consisting of a silicon oxide film is formed onto aluminum wiring 1, and a square opening secton 4 is shaped to the insulating film 2 positioned onto the region 3 to be blown out of the aluminum wiring 1 to expose one part of the aluminum wiring 1. When the whole is exposed in a plasma atmosphere using the mixed gas of Freon and hydrogen for several min, a thin carbon film 5 is formed onto the aluminum wiring 1 exposed to the opening section 4. Accordingly, when a semiconductor memory is prepared, a continuity test si conducted and there is no defective cell, laser-beams are irradiated to the opening section 4 connected to an excessive unnecessary cell. The laser beams irradiated are mostly absorbed to the carbon film 5 to heat the film, and the region 3 formed to the lower section of the carbon film 5 is rapidly heated through thermal conduction, and blown out through fusing action. |
