| 摘要 |
PURPOSE:To form channel length in accordance with the prescriptions by contacting one ends of the first and second electrodes on an oxide film with the oxide film of either one of a source or a drain, forming a gate electrode through the oxide film by the third electrode and connecting the first or second another electrode to fixed potential. CONSTITUTION:A field oxide film 7, the source 10 and the drain 10' are formed to the surface of a semiconductor substrate 1. The firt electrode 8'' is shaped while being contacted with the source on the gate oxide film and the second electrode 8' while being contacted with the drain at an interval, and the intermediate gate oxide film extends on the first and second electrodes and coats their surfaces. The third electrode 9 is formed onto the oxide film, and overlapped onto the first and second electrodes only by approximately half area. The whole surfaces of these surfaces are coated with an oxide film 5'', and the film 5'' functions as a protective film. The electrode 8'' and the electrode 9 are connected and a terminal VG is shaped and serves as the gate electrode, and the electrode 8' is connected to the drain and a terminal VD is formed. |
