| 摘要 |
1,186,892. Coating with metals &c. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. April 13, 1967 [April 16, 1966], No.17018/67. Heading C7F. [Also in Division C 1 ] A polycrystalline layer of an element is formed on a heated substrate by chemical reaction from a gas mixture comprising a compound of the element, even deposition of the element being secured by first depositing spaced nuclei of the element, or another element, or a compound of the element, on the substrate. Preferably the nuclei are deposited by thermal dissociation of the vapour of a compound, such as butane, other hydrocarbons, silane and alkyl silanes. Alternatively nucleating material may be deposited from its vapour. Ge, B, Si, W and Ta may be deposited on oxidic substrates such as steatite, Al oxide, Zr oxide, glass, quartz glass and Si nitride by reduction of halides with hydrogen after nucleation by thermal dissociation of a hydrogen compound. For example nucleation with C may be followed by deposition of Si, without intermediate cooling and with a change of feed gas. Si and Si carbide may be used to nucleate Si and B. Further nucleating material may be added during growth of the polycrystalline layer. Semi-conductor circuit elements can be made in a polycrystalline Si layer so deposited by local diffusion of doping substances. |
