| 摘要 |
PURPOSE:To form a pure metallic film with good adhesion, by treating a compound semiconductor wafer whereon an alloy thin film is formed in a treatment solution constituted of phosphoric acid and hydrogen peroxide before forming a pure metallic film. CONSTITUTION:The compound semiconductor wafer 11 with three elements including GaxAlrxAs and four elements including InxCa1-xAsyP1-y is treated in the mixed solution of phosphoric acid and hydrogen peroxide at the rate of 4:1 for 15min at 50 deg.C as the pre-treatment to form the pure metallic film 14. When using this treatment solution, even in the presence of e.g. pin holes on the alloy film 15, the etching advances from the surface of the semiconductor in isotropy, and accordingly the exfoliation of the alloy film 15 is generated in an extremely limited range. |
