| 摘要 |
PURPOSE:To form a pattern on a substrate with defference in level in high precision, by a method wherein a process is performed so that a beam exposing resist film is not transmitted through a smoothing substance film. CONSTITUTION:After a hole is formed on heat-oxided film 22 on a silicon substrate 21, PSG film is accumlated all over the surface to form difference in level, and deposit alminum film all over the surface. Then, polyimide resin is coated all over the surface, forming polyimide film 25 that has no difference in level. The polyimide film 25 is then colored black with carbon black, and SiO2 film 26 is deposited on the whole surface, followed by coating of positive photoresist film on it. After that, exposure and developing are performed, forming a resist pattern 27. This resist pattern is used as a mask to form SiO2 film pattern 26. At this time, the exposed beam does not reach the alminum film 24, so the photoresist film 27 cannot be exposed. Next, the polyimide film is etched, then alminum film 24 is also etched, forming a wiring pattern 24. After this, the SiO2 film pattern 26 and the polyimide film 25 are removed. |
