Method of manufacturing single-crystal film.

摘要

The whole surface of a polycrystalline or amorphous semiconductor film (5) disposed so as to continuously cover the surface of a single-crystal substrate (3) and an insulating film (4) is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts (5') of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed on only the Insular inslating film (4) formed on the single-crystal substrate (3).