发明名称 Negative-type resist sensitive to ionizing radiation.
摘要 <p>The use of an acetalized polyvinyl alcohol having a molecular weight of 10,000 to 1,000,000 represented by the formula: &lt;CHEM&gt; wherein: R min represents a residue of an aldehyde or a ketone; H&lt;2&gt; represents a hydrogen atom, which may partially be substituted with an acetyl group; R&lt;3&gt; represents naught or a monomeric unit copolymerizable with vinyl acetate; and 1, m, n are integers indicating polymerization degrees, as a negative-type resist in ionizing radiation lithography.</p>
申请公布号 EP0077057(A1) 申请公布日期 1983.04.20
申请号 EP19820109354 申请日期 1982.10.08
申请人 OGUCHI, KIYOSHI 发明人 OGATA, NAOYA;SANUI, KOHEI;AZUMA, CHIAKI;TANAKA, HOZUMI;OGUCHI, KIYOSHI;TAKAHASHI, YOICHI;NAKADA, TOMIHIRO
分类号 G03F7/038;(IPC1-7):03F7/10;08F8/28 主分类号 G03F7/038
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