| 摘要 |
PURPOSE:To obtain high luminous efficiency and good crystallization by a method wherein the aperture rate of a quartz cover with holes is held at 5-75% in applying the liquidus growh of Ga, GaP to a GaP substrate. CONSTITUTION:The GaP green LED does not shown good luminous efficiency for the small aperture rate of a quartz cover with holes 11. If covers 4 are not provided at the upper part of the opening of storage member 1 and a large amount of N2 is added to a GaP substrate 2 for the improvement of luminous efficiency, the thickness of each growth layer is unequal and the luminous efficiency also varies. Now, liquidus growth is done by holding the aperture rate of the quartz cover with holes at 5-75%. At the aperture rate of 5% or less, a large amount of N2 is not allowed to add to the GaP substrate and the aperture rate of 75% or more cause variations in growth layer thickness. Especially, when the aperture rate is held at about 65%, the luminous efficiency becomes high and the GaP green LED with good crystallization is obtained. As to the shape of holes 12, slit shape 12' is acceptable as well as round shape. |
