SEMICONDUCTOR MEMORY DEVICE

摘要

In a dynamic memory having a plurality of memory cells each of which consists of a MIS type field effect transistor and a charge storing capacitor connected thereto; a dynamic memory is disclosed wherein one electrode of the capacitor is made of a semiconductor layer which is formed on a semiconductor body through an insulating film and wherein a word line a part of which serves as a gate electrode of the MIS type field effect transistor is made of a conductor layer of multilayer structure which consists of a layer of semiconductor and a high-fusing metal layer containing the semiconductor.