| 摘要 |
<p>Maydan-l6 23. HIGH CAPACITY ETCHING APPARATUS of the disclosure An apparatus for high-throughput sputter etching or reactive sputter etching of wafers comprises a multifaceted wafer holder centrally disposed within a cylindrical chamber. A source of r-f power is capacitively coupled to the holder and the cylindrical chamber is grounded. By establishing a suitable plasma within the chamber, simultaneous anisotropic etching of, for example, twenty-four 6-inch wafers can be achieved in an apparatus that is approximately the same size as a conventional parallel-plate reactor that has a capacity of only three 6-inch wafers.</p> |
