发明名称 |
Monolithically integrated two-dimensional image sensor with a difference forming stage |
摘要 |
A monolithically integrated two-dimensional image sensor having an array of sensor elements disposed in rows and columns connected by respective row and column lines. A first readout of the sensor elements is undertaken and a charge packet representing the signal is formed by an oppositely doped semiconductor region connected to the respective column lines which charge packet contains charge carriers generated as a result of incident radiation as well as noise signals. A second readout of the sensor elements is undertaken for a short duration so that the charge packet generated as a result of the second readout represents only noise signals. A difference-forming stage connected to the image sensor has a storage capacitor associated with each column line for subsequently storing the two signals such that the voltage at the capacitor is displaced from a reference potential in an amount representing the difference between the two signals which thus provides a signal to a serial output device such as a charge transfer device which represents only charge carriers generated by incident radiation and is substantially noise-free. The capacitors are connected to a reset device for preparing the difference-forming stage for the next readout sequence.
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申请公布号 |
US4380755(A) |
申请公布日期 |
1983.04.19 |
申请号 |
US19800164300 |
申请日期 |
1980.06.30 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
ENDLICHER, FRANK;KOCH, RUDOLF |
分类号 |
H04N5/335;H01L27/146;H04N3/15;(IPC1-7):H04N5/30 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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