发明名称 |
HIGH VOLTAGE SOLID-STATE SWITCH |
摘要 |
<p>Hartman-16 HIGH VOLTAGE SOLID-STATE SWITCH A high voltage solid-state switch utilizes a dielectrically isolated lightly doped n type semiconductor body with a heavily doped p type anode region, a heavily doped n type first gate region, a moderately doped p type second gate region, and a heavily doped n type cathode region. The second gate region surrounds the cathode region. The first gate region is located directly between the anode region and the second gate region. The doping levels of the regions and the location of the first gate region between the anode and cathode regions facilitates a current break feature of the switch.</p> |
申请公布号 |
CA1145057(A) |
申请公布日期 |
1983.04.19 |
申请号 |
CA19800363569 |
申请日期 |
1980.10.30 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
HARTMAN, ADRIAN R.;RILEY, TERENCE J.;SHACKLE, PETER W. |
分类号 |
H04Q3/52;H01L21/762;H01L29/72;H01L29/739;H01L29/74;(IPC1-7):H01L29/74;H01L21/31 |
主分类号 |
H04Q3/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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