| 摘要 |
PURPOSE:To perform the patterning and the like for the titled device without using a lithography by a method wherein the characteristics of a polycrystalline Si film that is etching is not stopped when a proper annealing process is performed on the interface of an oxide layer is utilized. CONSTITUTION:The polycrystalline Si layer 2 of required film thickness is formed by performing CVD on the substrate of a semiconductor device whereon a goove was formed, a polycrystalline Si thin film 3 of approximately 100Angstrom in thickness is formed on said Si layer 2 by performing CVD again and a double- layer polycrystalline Si film 4 is formed. Then, using the mask 5 of the pattern inverse to the mask used when a groove was bored, an annealing is performed on the double-layer polycrystalline Si film 4 by irradiating a laser beam 6 from above. The Si at the annealed part of the laser beam irradiated section is etched by performing an etching process on the double-layer polycrystalline Si film 4 for which an annealing process was already performed. With regard to the part where no annealing was performed, the etching comes to a stop when it has made progress to 100Angstrom or thereabouts, the polycrystalline Si layer alone remains in the groove, and the polycrystalline Si layer on the other part is removed. |
