| 摘要 |
PURPOSE:To prevent adhesion of a reaction product to electrodes and generation of complication in a current of reactive gas (turbulent flow) at a plasma vapor phase growth device by a method wherein a horizontal type reaction cylinder is used, and a pair of electrodes is arranged outside. CONSTITUTION:Substrates 1 are held by square type quartz jigs, the jigs are settled in a separate chamber 29 of a reaction cylinder from an inlet 30, and the chamber is evacuated by a rotary pump 33 through a valve 32. Moreover a closing door 34 is opened, the jigs are introduced into the reaction cylinder by an automatic feeder, and a mixing plate 35 for mixer is also arranged. By closing the closing door 34, the substrates are arranged in space between electrodes 9, 10 interposing the intervals of 10-40mm. between them. A pair of the electrodes 9, 10 are arranged vertically or on both the sides of the reaction cylinder 25 as to apply electric field to the substrate vertically or in parallel, an electric furnace 5 is provided outside, and the substrates 1 are heated at 100-500 deg.C. Reactive gas is introduced into the reaction cylinder 25, a high frequency electric power is applied between the electrodes 9, 10, and presence of voids, etc. in the formed silicon carbide or in silicon is reduced utilizing the flight of reactive gas. |
