| 摘要 |
PURPOSE:To reduce the software error production probability of a bipolar memory by interposing in a layer state a tantalum layer covered with oxidized tantalum on the surface between the first metal layer forming a Schottky barrier diode (SBD) electrode and a base electrode and the second metal layer forming a collector electrode. CONSTITUTION:A tantalum layer 6 covered on the surface with an oxidized tantalum is inserted between the first metal layer 4 forming an electrode connected via a base contact 3 with the electrode and the base 3' of an SBD 1 and the second metal layer 5 forming an electrode connected via a collector contact 2 with the low resistance collector region 2' of the collector region 7. The oxidized tantalum is Ta2O5 having 200Angstrom of thickness obtained by the anodic oxidation of a tantalum layer (1,000Angstrom ) etched in the desired shape in an aqueous 0.01%- citric acid solution and selectively etches by a cylindrical plasma etching method with CF4 gas as etching gas. A capacity connected to the collector is added by a condenser formed with oxidized tantalum film interposed therein without increasing the cell area. |
