| 摘要 |
PURPOSE:To improve the characteristics of a polycrystalline silicon by a method wherein, when a hydrogen plasma processing is performed on the polycrystalline silicon, a cathode consisting of silicon is arranged in plasma gas, and the density of plasma is enhanced. CONSTITUTION:The hydrogen gas introduced into a vacuum container 1 generates hydrogen plasma 3 by the discharge of a high frequency coil 2. The hydrogen plasma 3 is generated by the high frequency power of 1kW output coming from the high frequency coil 2. At first, the polycrystalline silicon 4 to be plasma-processed is placed on a susceptor 5, and the vacuum container 1 is evacuated simultaneously with the commencement of heating of the polycrystalline silicon 4. After said vacuum container 1 has once been evacuated to 10<-5> Torr or below, hydrogen gas is introduced until 1Torr is reached, and wait in that state until the temperature of the polycrystalline silicon 4 comes up to 300 deg.C. After the temperature has reached 300 deg.C and stabilized, hydrogen plasma is generated and, at the same time, a hydrogen plasma processing is performed for one hour while applying power of 100V in between the polycrystalline silicon 4 and a single crystal silicon 6. |
