发明名称 Electron-optical arrangement for high-resolution electron-beam metrology
摘要 An electron-optical arrangement for generating high-current probes for electron-beam metrology is intended to be suitable for generating fine, high-intensity electron probes. According to the invention, an electron-optical arrangement for generating high-current probes for electron-beam metrology has single-stage probe forming. In an electron-optical arrangement according to the invention, all the intermediate images of the crossover are omitted, as a result of which the Boersch effect is minimised. Furthermore, the axial colour error is extremely small when using an imaging lens (AL) having a short focussing width. <IMAGE>
申请公布号 DE3138926(A1) 申请公布日期 1983.04.14
申请号 DE19813138926 申请日期 1981.09.30
申请人 SIEMENS AG 发明人 FROSIEN,JUERGEN,DR.ING.
分类号 G01R31/26;G01R31/302;H01J37/04;H01J37/141;H01J37/252;H01J37/28;(IPC1-7):H01J37/30;H01J49/44 主分类号 G01R31/26
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