| 发明名称 |
METHOD FOR THE SELECTIVE DETECTION OF DEFECTS, CAUSED BY POLISHING, ON THE SURFACE OF SILICON WAFERS |
| 摘要 |
The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are detectable by the naked eye. |
| 申请公布号 |
DE2965006(D1) |
申请公布日期 |
1983.04.14 |
| 申请号 |
DE19792965006 |
申请日期 |
1979.11.27 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SHIH, KWANG KUO |
| 分类号 |
B41J2/135;G01N21/88;H01L21/304;H01L21/306;(IPC1-7):G01N21/88;G01N1/28;G01N1/32 |
主分类号 |
B41J2/135 |
| 代理机构 |
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代理人 |
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| 主权项 |
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