| 摘要 |
PURPOSE:To obtain a high bright/dark contrast by forming an oxidized film layer on the surface of a lower metal electrode in a sandwich type primary image sensor having an amorphous silicon as a photoconductive layer and upper and lower transparent and metal electrodes, thereby blocking the injection of holes from the lower electrode. CONSTITUTION:A metal electrode 2 is formed on a glass substrate 1, an oxidized metal layer 3 is grown by heat or anodic oxidation on the surface of the electrode 2, amorphorus silicon 4 is laminated on the layer 3, and a transparent electrode 5(SnO2) is accumulated by a CVD method on the dilicon in a sandwich type structure. A ground potential is applied to the lower metal electrode, negative bias potential is applied to the upper transparent electrode, and when a light is incident by the photoconductivity of the amorphous silicon, a current is produced from the electrode 2, and a light signal is converted into an electric signal. In this case, the layer 3 becomes a blocking layer for the injection of holes from the electrode 2, thereby reducing the dark current and obtaining high bright/dark contrast. |
