| 摘要 |
PURPOSE:To obtain a high purity P type crystal by adding Ia group element as an impurity in a solvent of high vapor pressure component element in II-VI group compound under the control of the vapor of the low vapor pressure component element and performing liquid phase crystal growth. CONSTITUTION:A source crystal ZnSe is precipitated and grown in a crystal precipitator 11 due to the prescribed temperature difference between the precipitator 11 and a source crystal unit 12 with a solvent 13 of Se in the ZnSe. The vapor pressure of Zn 16 is controlled by the temperature of the Zn unit 14, thereby minimizing the deviation from the stoichiometrical composition of the crystal, and any of elements such as Li, Na, K of Ia group is added as an impurity, thereby obtaining a P type crystal formed at shallow impurity level. An N type layer is formed thereat, thereby obtaining a ZnSe blue light emitting diode. |
