| 摘要 |
PURPOSE:To reduce the auto-doping and the creeping up of impurities and to obtain the epitaxial layer of excellent quality by a method wherein, after the epitaxial layer has been grown in a vapor phase, a laser annealing is performed on the surface of said epitaxial layer. CONSTITUTION:An n type Si epitaxial layer 3, whereon phosphorus (P) impurities of 10<15>cm<-3> were doped, is grown in a vapor phase in the thickness of 2mum on a substrate 1 at the temperature of 900 deg.C which is lower than the approximate temperature of 1,000 deg.C at which the Sb impurities contained in an n<+> type buried layer 2 begin evaporation and diffusion using dechlorosilane (DiH2Ol2) gas and hydrogen (H2) gas. A laser beam is contracted to the diameter of 20mumphi and irradiated on the surface of an n type epitaxial layer 3 at 200W using a continuous dispatching argon (Ar) laser 4. At this time, the crystal defect density in the n type epitaxial layer 3 can be reduced to less than 10<14>cm<-2> from that of 10cm<8-2> or above for which no laser annealing was performed. |
