VAPOR PRESSURE CONTROLLED DRYETCHING PROCESS

摘要

PURPOSE:To produce the semiconductor surface with less impurity contained, defect and stain to be etched conforming to stoichiometry of semiconductor compound. CONSTITUTION:When high steam pressure elements are contained in a reaction gas to perform dry etching conforming to stoichiometry may be performed because the high steam pressure elements are restrained from getting out of the surface of samples by partial pressure of the high steam pressure element exerted on the surface of the samples due to decomposition of the reaction gas. When dryetching is performed by a reaction gas containing elements homologous with the high steam pressure element, the surfaces 6 may contain excellent crystal structure since the homologous elements will make up for any shortage of elements even if the high steam pressure elements get out of the surfaces. The homologous elements are classified into VIII groups in the periodic table.