发明名称 |
Auf Druck ansprechende Halbleitervorrichtung |
摘要 |
In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the "off" or "on" state, corresponding to the applied stress. |
申请公布号 |
DE1961492(A1) |
申请公布日期 |
1970.07.30 |
申请号 |
DE19691961492 |
申请日期 |
1969.12.08 |
申请人 |
MATSUSHITA ELECTRONICS CORP. |
发明人 |
KANO,GOTA;YOKOZAWA,MASAMI;KAWASAKI,TATSUO;FUJIWARA,SHOHEI |
分类号 |
G01L1/18;H01L21/00;H01L29/00;H01L29/84 |
主分类号 |
G01L1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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