| 摘要 |
The crystal is grown from a gaseous mixture in a reaction chamber and drawn out continuously. The temp. gradient between the inside and outside of the growing crystal is maintained at such a value that the stress due to thermal expansion of the material is held to less than a maximum value of 15% of the yield stress of the same monocrystalline material with no deformation. An electric current is passed through the crystal to provide the necessary heating. |
