发明名称 |
Semiconductor lasers and method for producing the same. |
摘要 |
<p>A double heterojunction semiconductor laser lasing a high output power beam of the fundamental transverse mode comprises a stripe active layer (6) which is surrounded with clad layers and which has an upper plane (11) and a lower plane (12) which are parallel to each other and sides (13,14) inclined toward the planes (11, 12), the sides (13, 14) being uneven in a longitudinal direction.</p> |
申请公布号 |
EP0076761(A1) |
申请公布日期 |
1983.04.13 |
申请号 |
EP19820401812 |
申请日期 |
1982.10.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
SHIMA, KATSUHITO;HANAMITSU, KIYOSHI |
分类号 |
H01L33/30;H01S5/00;H01S5/227;(IPC1-7):01S3/19 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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