发明名称 Semiconductor lasers and method for producing the same.
摘要 <p>A double heterojunction semiconductor laser lasing a high output power beam of the fundamental transverse mode comprises a stripe active layer (6) which is surrounded with clad layers and which has an upper plane (11) and a lower plane (12) which are parallel to each other and sides (13,14) inclined toward the planes (11, 12), the sides (13, 14) being uneven in a longitudinal direction.</p>
申请公布号 EP0076761(A1) 申请公布日期 1983.04.13
申请号 EP19820401812 申请日期 1982.10.04
申请人 FUJITSU LIMITED 发明人 SHIMA, KATSUHITO;HANAMITSU, KIYOSHI
分类号 H01L33/30;H01S5/00;H01S5/227;(IPC1-7):01S3/19 主分类号 H01L33/30
代理机构 代理人
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