发明名称 FUNCTIONAL DEPOSITED FILM FORMING DEVICE BY PLASMA CHEMICAL VAPOR DEPOSITION METHOD
摘要 PURPOSE:To maintain the constant plasma discharge in a reaction space and to make the stationary formation of deposited films having a uniform film thickness and film quality by specifying the relation between the distance between a cathode electrode and cylindrical substrate (anode electrode) and the length of the cathode electrode. CONSTITUTION:The formation of the uniform deposited film is prohibited by an ion attack, etc. When the inter-electrode distance is small and as a plasma discharge arises hardly if said distance is large in the formation of the deposited film. Plasma in not uniform when the length of the cathode electrode is large and the inter-electrode distance is small. Gaseous raw materials are discharged from the reaction space before said materials are completely separated and the deposited film having the good film quality is not obtainable if the length of the cathode electrode is too small. The length L of the cathode electrode and the distance (d) between the cathode electrode and the anode electrode are, therefore, so determined as to satisfy the equation 5<=L/d<=40, by which the intensity distribution of the plasma discharge is uniformized and the deposited film having the uniform film thickness and quality is obtd.
申请公布号 JPS6314875(A) 申请公布日期 1988.01.22
申请号 JP19860157611 申请日期 1986.07.04
申请人 CANON INC 发明人 YAMAZAKI ITARU
分类号 H01L21/205;C23C16/24;C23C16/30;C23C16/50;C23C16/509;G03G5/08;H01J37/32 主分类号 H01L21/205
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