| 摘要 |
PURPOSE:To obtain transfer electrodes which are difficult to generate poor insulations and suitable for miniaturization, by providing the array of transfer electrodes in parallel on the insulating film of a semiconductor substrate, simultaneously coupling one end of the electrode which applies equal voltages, and then connecting the other end to the wiring which transmits the signal. CONSTITUTION:In parallel with the array of photoelectric conversion elements 31 in a row, a gate electrode 34 and, with it placed between, the first phase transfer electrodes 32a-32d are formed opposed to the element 31 one to one via an insulating film. The sides of the gate electrode 34 are joined one another, and the other ends are connected 37, 37a, 37b to the Al wiring at an interval of one piece. Among the first phase transfer electrodes, the second phase transfer electrodes 33a-33d are formed by slightly superposing thereon, joined by a pair of two pieces and connected 38a, 38b to the Al wiring 36. The connection parts 38a, 38b are formed on the region between connection parts 37a, 37b. In this constitution, since connection points can be reduced for the number of the first and second phase electrodes, the area surpulsage for connection becomes large resulting in the facilitation of the connection, and electrodes are formed in an integral body, a normal transfer voltage is applied even with the poor insulation at one point, and accordingly the rate of defectives greatly decreases. |
