| 摘要 |
PURPOSE:To suppress the growth of particles as well as obtain the flat surface for the titled semiconductor device by a method wherein, after an insulating film has been coated, the groove provided on a substrate is filled up by laminating a number of polycrystalline or amorphous films. CONSTITUTION:An N-layer 2 and an Si epitaxial layer 3 are superposed on a P type Si substrate 1, and an Si3N4 film 5 is laminated on the surface by forming an SiO2 film 4. An aperture is provided by performing an etching on the films 4 and 5, and a vertical groove 6 reaching the substrate 1 is formed by performing a reactive sputtering. After an SiO2 film 7 has been provided on the surface and the film 5 has been removed by etching, the entire surface is covered by an Si3N4 film 8, an SiO2 thin film is formed by superposing a polycrystalline Si film 9 using a decompression CVD method and exposing the above to air and six polycrystalline Si films 9, which were obtained by repeating the above process six times, are laminated through the intermediary of the SiO2 film. The above is processed in O2 at 1,000 deg.C, an SiO2 film 10 is formed on the surface of the film 9, and an Si3N4 film 11 is superposed. The film 9 is etched a little using a resist mask 12, and when the film 8 is exposed by repeating a side etching on the film 10, a flat surface is obtained and polycrystalline Si can be filled in the groove. A thermal oxide film 13 is formed on the film 9 by removing the films 10 and 11, the Si3N4 film 8 is removed and manufacture of the semiconductor device is now completed. |
