| 摘要 |
PURPOSE:To obtain a semiconductor laser that is easily made and is equipped with sufficiently stabilized oscillation wavelengths by forming plurality of resonators and composing a mechanism so that the oscillation wavelengths can be selected arrording to beat which is produced on the basis of an interference phenomenon of laser beams emitted among respective resonators. CONSTITUTION:when the first clad layer 15 and an active leyer 16 are formed on a substrate 14, recessed perts, corresponding to grooves 9, 10, and 11 formed et GaAs substrete 11, are formed in the first clad layer 15 on the grooves 9, 10, and 11 and the active layer 16 are formed while it is being pulled in the recessed parts located in the first clad 15. Oscillating operations of laser elements 1, 2, and 3 are formed by three kinds of resonators comprising laser element 1-waveguide 4-laser element 2, laser element 1waveguide 4 and 5-laser element 3, and laser element 2waveguide 5-laser element 3. Thus, beat is provided by an interference phenomenon of laser beams developed among resonators having different lengths and wavelength selectivity is obtained by a mechanism of beat and accordingly a semiconductor leser performs the laser oscillating operations having stable selected wavelengths. |
