| 摘要 |
PURPOSE:To contrive the great reduction of dark currents, by polishing the surface of a layer insulating film flat, when providing a photoconductor film as a photoelectric conversion means on a semiconductor substrate wherein an MOS element for a scanning means is incorporated. CONSTITUTION:The insulator 18' of SiO2, etc. is deposited on an FET thicker than the surface unevenness of the MOSFET as the scanning means, and then the surface thereof is polished by the impalpable powder of Ce oxide, etc. resulting in a flatness. Next, an aperture 20 is opened on the layer 18' and filled with conductive material 21 and connected to the Al film insulated for each FET, and thereafter the photoconductive film 10' of ZnSe, etc. is deposited and covered with a transparent conductive film 11. Since the photoconductive film 10' is homongeneous in thickness over the entire region without sharp stepwise differences, the dark current is greatly reduced, the incident light is absorbed mostly by the film 10', and accordingly the generation of blooming or smear can be prevented. |
