| 摘要 |
PURPOSE:To realize high integration through partial overlap of base electrode and emitter electrode and disposition of both electrodes on the self-alignment basis by selectively using H3PO4 and HF for the Si3N4 film and SiO2 film. CONSTITUTION:The N epitaxial layer 3 on the P type Si substrate having the N<+> buried layer is isolated by the P layer 4, and the field oxide film 6 is selectively formed and thereby the Si3N4 7 is formed. The resist mask 8, 10 are coated thereon, and the P layer 9 is provided, and a window is opened 11 thereto with the fluoric acid. The mask is removed, the poly-Si 12 is stacked, the boron B ion is implanted, and the P layer 9' is formed through the heat treatment. The base electrode 12' is then formed by etching the layer 12 and then it is covered with the Si3N4 13 through the nitriding. Then resist mask 14 is formed thereon, a window is opened on the film 6 with the fluoric acid, and the base 9'' is formed through separate masking. Then, the resist is removed, the poly-Si 17 is coated thereon, the As ion is implanted and the N<+> emitter 18 and collector connecting layer 18' are formed through the high temperature processing in the N2 ambient. Succeedingly, the poly-Si 17 is selectively removed and emitter electrode 19 and collector electrode 20 are formed. Thereby, the emitter and collector electrodes are brought into close proximity on the basis of the self-alignment and integration can be largely improved. |
