| 摘要 |
PURPOSE:To eliminate current leakage resulting from P-N junction and to obtain a large photo response characteristic by providing an oxide film between the semiconductor thin film and semiconductor substrate at the light sensible surface. CONSTITUTION:An oxide film 32 is formed on the P type single crystal Si substrate 1. The N type polycrystal Si film 42 is then formed over the layer 32. Thereafter the electrodes 3, 4 are formed on both front and rear sides. When the electron and hole pair excited and generated by the light beam within the substrate 1 moves in the direction to the film 32 by the diffusion, the hole receives a force in the direction as becoming far from the film 32 due to a bending of energy band in the vicinity of film 32, while electron receives a force in the direction as becoming near to the film 32. Therefore, the electron and hole are isolated and the hole remains in the substrate 1 while the electron moves to the film 32. The film 32 is very thin and the electron having reached the vicinity of film 32 passes easily through the film 32 and reaches the film 42. The electron and hole pair generated in the substrate 1 in the above process is converged as the carrier. The electron and hole pair generated in the film 42 is also converged as the carrier by the similar process. |
