| 摘要 |
PURPOSE:To form the resin film surface smooth without eaves and prevent disconnections, by removing an affected film on the high polymer resin film surface by reducing into plasma ashes. CONSTITUTION:An Mo film 13 is adhered on the polyimide quinazolidion film 12 on an Si substrate 11, and a resist mask is applied and etched by the mixed solution with phosphoric acid, acetic acid and nitric acid resulting in an aperture 14. Next, an aperture 14' is formed on the film 12 by the mixed solution with hydrazine and ethylene diamine by the Mo mask 13. Next, when the resist mask and the Mo mask are corrosion-removed, the affected film 15 is generated on the film 12 in an eave form. When an Al conductive pattern is formed after reducing the affected film 15 into ashes by O2 plasma and removing it, disconnections do not generate on the shoulder of the aperture part. |
