| 摘要 |
PURPOSE:To fill elements with insulating layers and leave the insulating film on elements, by applying an even exposure from the substrate back surface and a pattern exposure from the surface on the resist layer coating insular elements on a transparent insulating substrate. CONSTITUTION:Insular Si n layer 2 and npn element part 8 are formed on the sapphire substrate 1, the insulating layer 3 approx. the same in thickness as the Si layer is deposited, and the resist 9 is applied. When evenly exposing 10 from the side of the substrate 1, the part 9 becomes sensitive. Subsequently, the part 9' is made sensitive by the mask 11 from the surface. It is developed, the insulator layer is corrosion-removed by the resist mask, the interval between layers 2 and 8 is filled flat with the insulator layer 3', and accordingly the thick insulator layer 3 is left on the layer 2. Next, when a gate oxide film 13, poly Si 6, 6', an insulating film 14 and metallic wirings 4, 5 are formed, an SOS type device is completed. Thus, in a process of burying the insulating layer, by leaving the part thereof on an insular layer, a thick and high withstand voltage insulating film can be formed resulting in the great simplification of the process of the manufacture of a device. |
