| 摘要 |
PURPOSE:To obtain a high speed, highly reliable semiconductor device by using electrode and electrode wiring consisting of a metal silicate, particularly a high melting point metal silicate. CONSTITUTION:The MoSi2 film 5 is provided over the field oxide film 2 and gate oxide film 4 of the P type Si substrate 1, the MoSi2 film 7 is then stacked again, the As ion is implanted and the n<+> layer is formed. Thereafter, the MoSi2 film 7 and the substrate 1 are placed in contact through the heat treatment under the N2 ambient. Then, as is well known, the n<+> layers 8, 9 are provided by implanting the As ion and it is covered with the SiO2 10 by the CVD method and the Al electrode 11 is provided. In this structure, the MoSi2 and source 8 are in the ohmic contact with a specific resistance lower than that of Si, thus realizing a high speed operation. In addition, since the MoSi2 film 5 is used as mask, the As ion does not pass through and it does not penetrate due to the films 5 and 7 located at the gate area. Accordingly, a threshold voltage does not change and since the As ion gets the Na<+> ion, high stability and reliability are assured. |
