| 摘要 |
PURPOSE:To obtain the etching method with which no characteristic deterioration is generated after etching by a method wherein an etching is performed using a cylinder-shaped device at first, and then the second etcing is performed in vertical direction with end face matched to the mask face using a flat plate type device. CONSTITUTION:An etching is performed on an amorphous silicon diode thin film 3 using a cylinder-shaped device. At this point of time, no overetching is existed and as the etching is performed at a high speed of 60-100A/sec in a short time using several Torr of CF4, the rise in temperature is small and no diode characteristics are deteriorated. Then, the manufacture of the diode is completed by performing a reactive ion-etching using a flat plate type device. Said etching is to be performed at the speed of 10A/sec or thereabouts using CF4 of 0.1-1 Torr. At this point, as the amorphous silicon diode thin film 3 to be etched is very small in area and very ting in thickness, the etching can be finished in a short time and no temperature rise is generated. |
