| 摘要 |
PURPOSE:To getter effectively defects induced by processes and the pollution by heavy metals by a method wherein a single crystal silicon film formed on an insulation film is made to have an effect of gettering. CONSTITUTION:Oxygen ions 4 of high dose are implanted uniformly into the whole of a polycrystalline silicon film 3 on an insulation film 2 formed on a single crystal silicon substrate 1, and then laser beams 5 of high output are applied on the whole thereof. The polycrystalline silicon film 3 is thereby transformed structurally into a single crystal silicon film 6, while the oxygen ions are diffused uniformly into the single crystal silicon film 6. When laser beams 5' of different output from that conditioning the monocrystallization are applied additionally to the single crystal silicon film 6, the oxygen existing on the uppermost surface of the film is diffused externally and a region 7 free from oxygen is formed on the surface thereof. Lastly it is annealed in a non-oxidizing ambience at the temperature of 600-800 deg.C and thereby a region 8 wherein minute defects having oxygen educt as nucleus, and a region 9 wherein no defect is generated, are foumed. Thus, only an active region wherein a device is formed is made free from defects, and the crystal defect and the pollution by heavy metal can be gettered by the minute defects generated in high density. |
